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The reverse recovery characteristics of an SiC superjunction MOSFET with a p-type Schottky diode embedded at the drain side for improved reliability | SpringerLink
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The reverse recovery characteristics of an SiC superjunction MOSFET with a p-type Schottky diode embedded at the drain side for improved reliability | SpringerLink
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One-Dimensional van der Waals Heterojunction Diode | ACS Nano
Black Phosphorus-IGZO van der Waals Diode with Low-Resistivity Metal Contacts | ACS Applied Materials & Interfaces
Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses | Nature Photonics
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Improved reverse recovery characteristics obtained in 4H‐SiC double‐trench superjunction MOSFET with an integrated p‐type Schottky diode - Kotamraju - 2020 - IET Circuits, Devices & Systems - Wiley Online Library
Figure 4 from Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode | Semantic Scholar
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A quantum light-emitting diode for the standard telecom window around 1,550 nm | Nature Communications
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Giant spin-torque diode sensitivity in the absence of bias magnetic field | Nature Communications
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