PDF) GaN Heterodimensional Schottky Diode for THz Detection | q fareed - Academia.edu
Forward and reverse bias C-V characteristics for Ni/ n-GaN Schottky... | Download Scientific Diagram
An efficient Terahertz rectifier on the graphene/SiC materials platform | Scientific Reports
InSe Schottky Diodes Based on Van Der Waals Contacts - Zhao - 2020 - Advanced Functional Materials - Wiley Online Library
Semilog forward and reverse bias I-V characteristics for Ni/ n-GaN... | Download Scientific Diagram
Sensors | Free Full-Text | Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles | HTML
Exploiting total internal reflection geometry for deep broadband terahertz modulation using a GaAs Schottky diode with integrated subwavelength metal microslits
Schottky Diode or Schottky Barrier Semiconductor Diode
Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodes
Figure 4 from Scalable Analytical Model of 1.7 THz Cut-off Frequency Schottky Diodes Integrated in 55nm BiCMOS Technology | Semantic Scholar
Step tunneling: (a) forward bias, (b) reverse bias. 2.6. THz Diode... | Download Scientific Diagram
3 Pulsing scheme for a Schottky diode. The sample is reverse biased to... | Download Scientific Diagram
Step tunneling: (a) forward bias, (b) reverse bias. 2.6. THz Diode... | Download Scientific Diagram
Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics - Wang - 2021 - Advanced Electronic Materials - Wiley Online Library
PDF) Barrier height engineering on GaAs THz Schottky diodes by means of high-low doping, InGaAs- and InGaP-layers | Bernd Witzigmann - Academia.edu
Applied Sciences | Free Full-Text | Comparison between Up-Conversion Detection in Glow-Discharge Detectors and the Schottky Diode for MMW/THz High-Power Single Pulse | HTML
Schottky diode - Definition, Symbol, Working and Applications - Diode
DC characteristics and THz responsivity. (a) Schematic of rectification... | Download Scientific Diagram
Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure: APL Photonics: Vol 6, No 11
![PDF] A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/314d1335b034126c9c9f013c694a23eff7dcfd83/2-Figure1-1.png "PDF] A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes | Semantic Scholar")
PDF] A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes | Semantic Scholar
Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodes
Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure
An efficient Terahertz rectifier on the graphene/SiC materials platform | Scientific Reports
