Temperature dependence of the threshold current of QW lasers
Optimization of parameters of a structured semiconductor microchannel and those of increasing single-electron pulse level
REVIEW Chalcogenide passivation of III–V semiconductor surfaces
The calculated Ioffe-Regel critical density of Si- MOSFET as a function... | Download Scientific Diagram
ECE 4570 Electronic Device Fundamentals
SpecialIssue
MRS Internet Journal Research Nitride Semiconductor
A. F. Ioffe Semiconductor Thermoelements And Thermoelectric Cooling Infosearch ( 1957)
Director of Ioffe Institute: “Science сannot exist in isolation”
ATE Central - Semiconductors on NSM
Development of detectors based on binary semiconductors in Ioffe Physico-Technical Institute
Semiconductor Parameters | PDF | Band Gap | Electrical Resistivity And Conductivity
Band structure and carrier concentration of Indium Arsenide (InAs)
Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric
Handbook Series on Semiconductor Parameters : ALUMINIUM GALLIUM ARSENIDE
Effect of uniaxial deformation on electrophysical parameters of 6<Emphasis Type="Italic">H</Emphasis>-SiC
Heterojunctions based on Silicon Carbide
SEMICONDUCTORS AND DIELECTRICS
A. F. Ioffe Semiconductor Thermoelements And Thermoelectric Cooling Infosearch ( 1957)
NSM Archive - Band structure and carrier concentration of Silicon (Si)
ATE Central - Semiconductors on NSM
Handbook Series on Semiconductor Parameters : SILICON
Interface-induced lateral anisotropy of semiconductor heterostructures M.O. Nestoklon, Ioffe Physico-Technical Institute, St. Petersburg, Russia JASS ppt download
Semiconductor Parameters | PDF | Band Gap | Electrical Resistivity And Conductivity
Handbook Series on Semiconductor Parameters
New Semiconductor Materials. Characteristics and Properties
PDF) Energy Storage Capacitor Cell with Semiconductor Switches
On the Band Structure of Ultrathin Layer Semiconductor Superlattices
