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The breakdown mechanism in a lightly doped p - n junction under reverse biased condition is called
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![PDF] MHz Count Rate , 139 dB Dynamic Range Single-Photon Avalanche Diode with Active Quenching Circuit in 130 nm CMOS Technology | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/25f08c55f36a73dc2cfeb7fa5a81c5e05fc10f4b/1-Figure2-1.png "PDF] MHz Count Rate , 139 dB Dynamic Range Single-Photon Avalanche Diode with Active Quenching Circuit in 130 nm CMOS Technology | Semantic Scholar")
PDF] MHz Count Rate , 139 dB Dynamic Range Single-Photon Avalanche Diode with Active Quenching Circuit in 130 nm CMOS Technology | Semantic Scholar
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