![Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S003811012100037X-gr3.jpg)
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect
![Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S003811012100037X-gr5.jpg)
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect
![Diode‐Like Selective Enhancement of Carrier Transport through Metal–Semiconductor Interface Decorated by Monolayer Boron Nitride | Request PDF Diode‐Like Selective Enhancement of Carrier Transport through Metal–Semiconductor Interface Decorated by Monolayer Boron Nitride | Request PDF](https://www.researchgate.net/publication/343284231/figure/fig3/AS:1093242691043338@1637660777518/Diode-like-selective-enhancement-of-carrier-transport-through-MIS-contact-a-c_Q320.jpg)
Diode‐Like Selective Enhancement of Carrier Transport through Metal–Semiconductor Interface Decorated by Monolayer Boron Nitride | Request PDF
![Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions | Nature Communications Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions | Nature Communications](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fs41467-021-21861-6/MediaObjects/41467_2021_21861_Fig4_HTML.png)
Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions | Nature Communications
![Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S003811012100037X-gr6.jpg)